منابع مشابه
Ni2As2O7 pyrochlore nanomaterial: Solid state synthesis, crystal structure determination, crystal phase growth study and physical properties
Nanostructured Ni2As2O7 semiconductor samples were synthesized by a solid state method among As2O3 and Ni(NO3)2.6H2O raw materials at 650 °C (S1) and 750 °C (S2) as reaction temperatures. The synthesized nanomaterials were characterized by powder X-ray diffraction (PXRD) technique and F...
متن کاملNi2As2O7 pyrochlore nanomaterial: Solid state synthesis, crystal structure determination, crystal phase growth study and physical properties
Nanostructured Ni2As2O7 semiconductor samples were synthesized by a solid state method among As2O3 and Ni(NO3)2.6H2O raw materials at 650 °C (S1) and 750 °C (S2) as reaction temperatures. The synthesized nanomaterials were characterized by powder X-ray diffraction (PXRD) technique and F...
متن کاملPhase diagram of the screened two-dimensional electron crystal
The melting tine of the two-dimenrional cry~tal formed by rurface electrons above liquid helium film5 a d ~ o r k d nn PMMh has hccn mapped out by means ola m~crowave cavity technique a t tcrnpxiturcs above 1 K. The ~nfl uence of the dielectric substrate nn such a transifion ha5 k e n measured af diffcrcnt tcmycraiures and at various hcl~z~rn film thicknesses. The recults are found to be in goo...
متن کاملOptimal growth and impatience: A phase diagram analysis
When the time preference exhibits decreasing marginal impatience, the rate at which the discount function decreases plays a central role in the stability analysis. This paper shows that if the discount function is strictly decreasing, strictly convex and has a uniform bound on its first derivative, then the continuous-time, one-sector optimal growth problem has a unique steady state that exhibi...
متن کاملذخیره در منابع من
با ذخیره ی این منبع در منابع من، دسترسی به آن را برای استفاده های بعدی آسان تر کنید
ژورنال
عنوان ژورنال: Bulletin of the Japan Institute of Metals
سال: 1990
ISSN: 0021-4426,1884-5835
DOI: 10.2320/materia1962.29.689